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 BC807-16W, -25W, -40W
Elektronische Bauelemente -500 mA, -50 V PNP Plastic Encapsulate Transistor
FEATURES
Ideally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W
MARKING
16W:5A; 25W:5B; 40W:5C
PACKAGE DIMENSIONS
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
ABSOLUTE MAXIMUM RATINGS at Ta = 25C
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Collector Power Dissipation Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG
Ratings
-50 -45 -5 500 200 +150, -55 ~ +150
Unit
V V V mA mW
CHARACTERISTICS at Ta = 25C
Symbol
BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat) VBE(on)
hFE(1)
Min.
-50 -45 -5 -
Max.
-0.1 -0.2 -0.1 -0.7 -1.2 250 400 600 10
Unit
V V V uA uA uA V V IC = -10 uA, IE = 0 IC = -10 mA, IB = 0 IE = -1 uA, IC = 0 VCB = -20V, IE = 0 VCE = -20V, IB = 0 VEB = -5V, IC = 0
Test Conditions
IC = -500mA, IB = -50 mA VCE = -1 V, IC = -500 mA VCE = -1 V, IC = -100 mA VCE = -1 V, IC = -500 mA
807-16W 807-25W 807-40W
100 160 250 40 80 -
hFE(2) fT COB
MHz pF
VCE = -5 V, IC = -10 mA, f = 100MHz VCB = -10V, f=1MHz
01-June-2002 Rev. A
Page 1 of 3
BC807-16W, -25W, -40W
Elektronische Bauelemente -500 mA, -50 V PNP Plastic Encapsulate Transistor
CHARACTERISTIC CURVES
01-June-2002 Rev. A
Page 2 of 3
BC807-16W, -25W, -40W
Elektronische Bauelemente -500 mA, -50 V PNP Plastic Encapsulate Transistor
CHARACTERISTIC CURVES
01-June-2002 Rev. A
Page 3 of 3


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